IPD30N08S2L21ATMA1 MOSFET Power Electronics N-Channel OptiMOS® Power-Transistor Package TO-252-3

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Shenzhen Sai Collie Technology Co., Ltd.

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Name: IPD30N08S2L21ATMA1 MOSFET Power Electronics NChannel OptiMOS PowerTransistor Package TO2523
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : IPD30N08S2L21ATMA1

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 75 V

Current - Continuous Drain (Id) @ 25°C : 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 20.5mOhm @ 25A, 10V

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1650 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD30N08S2L21ATMA1 MOSFET Power Electronics N-Channel OptiMOS® Power-Transistor Package TO-252-3 Images