BSC123N08NS3GATMA1 MOSFET Power Electronics N-Channel 80 V OptiMOSTm3 Package 8-PowerTDFN

Product Categories

Shenzhen Sai Collie Technology Co., Ltd.

Contact Now

Name: BSC123N08NS3GATMA1 MOSFET Power Electronics NChannel 80 V OptiMOSTm3 Package 8PowerTDFN
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : BSC123N08NS3GATMA1

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 80 V

Current - Continuous Drain (Id) @ 25°C : 11A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 12.3mOhm @ 33A, 10V

Contact Now

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Sai Collie Technology Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1870 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN

BSC123N08NS3GATMA1 MOSFET Power Electronics N-Channel 80 V OptiMOSTm3 Package 8-PowerTDFN Images