NTMFS5C410NLT1G - N-Channel Enhancement Mode MOSFET for Power Electronics Applications

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Shenzhen Sai Collie Technology Co., Ltd.

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Name: NTMFS5C410NLT1G NChannel Enhancement Mode MOSFET for Power Electronics Applications
Brand: onsemi
Price: 1 USD

Brand Name : onsemi

Model Number : NTMFS5C410NLT1G

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 40 V

Current - Continuous Drain (Id) @ 25°C : 46A (Ta), 302A (Tc)

Rds On (Max) @ Id, Vgs : 0.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 143 nC @ 10 V

Vgs (Max) : ±20V

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	46A (Ta), 302A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	0.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8862 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 139W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads

NTMFS5C410NLT1G - N-Channel Enhancement Mode MOSFET for Power Electronics Applications Images