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Brand Name : onsemi
Model Number : NTTFS4C13NTAG
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 7.2A (Ta)
Rds On (Max) @ Id, Vgs : 9.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 7.8 nC @ 4.5 V
Vgs (Max) : ±20V
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 9.4mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 780mW (Ta), 21.5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-WDFN (3.3x3.3) | |
Package / Case |
Product Listing:
ON Semiconductor NTTFS4C13NTAG N-Channel MOSFET Power Electronics
Parameters:
• Drain-Source Voltage: 30V
• Drain Current: 4.5A
• Gate-Source Voltage: ±20V
• RDS(on): 0.0081Ω
• Power Dissipation: 1.6W
• Drain-Source Capacitance: 25pF
• Operating Temperature: -55°C to 175°C
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3
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NTTFS4C13NTAG MOSFET Power Electronics - High Efficiency Power Conversion with Advanced Protection Features Images |