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Brand Name : onsemi
Model Number : FDMC3612
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs : 110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 21 nC @ 10 V
Vgs (Max) : ±20V
FDMC3612 N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 110mOhm @ 3.3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 35W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
Product Listing:
ON Semiconductor FDMC3612 N-Channel Power MOSFET
• N-Channel Enhancement Mode
• Drain-Source Voltage: 60V
• Continuous Drain Current: 60A
• RDS(on): 4.3mΩ @ 10V
• Maximum Power Dissipation: 314W
• Operating Temperature Range: -55°C to 150°C
• Lead Free/ RoHS Compliant
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FDMC3612 N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications Images |