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Brand Name : onsemi
Model Number : FDD86102LZ
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs : 22.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26 nC @ 10 V
Vgs (Max) : ±20V
FDD86102LZ High Power MOSFET Power Electronics Industrial Applications and High-Voltage Automotive Applications
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 22.5mOhm @ 8A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1540 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.1W (Ta), 54W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-252AA | |
Package / Case |
Product Listing:
ON Semiconductor FDD86102LZ N-Channel Power MOSFET
The ON Semiconductor FDD86102LZ is a high-performance N-channel power MOSFET. It features low on-resistance for high-efficiency switching applications.
Features:
• Low on-resistance
• Fast switching speed
• High peak current capability
• High voltage withstand capability
• RoHS Compliant
Specifications:
• Drain-Source Voltage: 100 V
• Gate-Source Voltage: ±20 V
• Drain Current: 75 A
• Drain-Source On-Resistance: 4.2 mΩ
• Gate Charge: 45 nC
• Power Dissipation: 320 W
• Operating Temperature Range: -55°C to +150°C
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FDD86102LZ High Power MOSFET Power Electronics Industrial Applications and High-Voltage Automotive Applications Images |