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Brand Name : onsemi
Model Number : FCH072N60
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 600 V
Current - Continuous Drain (Id) @ 25°C : 52A (Tc)
Rds On (Max) @ Id, Vgs : 72mOhm @ 26A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 125 nC @ 10 V
Vgs (Max) : ±20V
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 72mOhm @ 26A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 380 V | |
FET Feature | - | |
Power Dissipation (Max) | 481W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-247-3 | |
Package / Case |
Product Listing:
FCH072N60
Manufacturer: ON Semiconductor
Parameters:
Type: N-channel MOSFET
Vdss (Drain-Source Voltage): 600V
Id (Continuous Drain Current): 72A
Rds (On Resistance): 0.08Ω
Vgs (Gate-Source Voltage): ±20V
Qg (Gate Charge): 55nC
Pd (Maximum Power Dissipation): 300W
Package: TO-247AC
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FCH072N60 High-Performance High-Voltage N-Channel MOSFET Power Electronics for Optimized Power Conversion Efficiency Images |