Name: FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge
Brand: onsemi
Price: 1 USD

FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge

Brand Name : onsemi

Model Number : FDC3612

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

Drain to Source Voltage (Vdss) : 100 V

Current - Continuous Drain (Id) @ 25°C : 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 125mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Vgs (Max) : ±20V

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General Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features
• 2.6 A, 100 V
RDS(ON) = 125 m @ VGS = 10 V
RDS(ON) = 135 m @ VGS = 6 V
• High Performance Trench Technology for Extremely Low RDS(ON)
• Low Gate Charge (14 nC Typical)
• High Power and Current Handling Capability
• Fast Switching Speed
• This is a Pb−Free Device

Applications
• DC/DC Converter

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FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge

FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge

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FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6


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FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge

FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge

FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge Images