Sign In | Join Free | My polstate.com |
|
Brand Name : onsemi
Model Number : FDC3612
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Vgs (Max) : ±20V
Single P-Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge
P-Channel 1.8V Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω
–20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 125mOhm @ 2.6A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
General Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 2.6 A, 100 V
RDS(ON) = 125 m @ VGS = 10 V
RDS(ON) = 135 m @ VGS = 6 V
• High Performance Trench Technology for Extremely Low RDS(ON)
• Low Gate Charge (14 nC Typical)
• High Power and Current Handling Capability
• Fast Switching Speed
• This is a Pb−Free Device
Applications
• DC/DC Converter
![]() |
FDC3612 MOSFET Power Electronics High Performance Trench Technology for Extremely Low Gate Charge Images |