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Brand Name : onsemi
Model Number : FQD12N20LTM
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 200 V
Current - Continuous Drain (Id) @ 25°C : 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Vgs (Max) : ±20V
N-Channel PowerTrench
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 5V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V | |
Vgs (Max) | ±15V | |
Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.3W (Ta) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-223 (TO-261) | |
Package / Case |
Description
©2009 Fairchild Semiconductor Corporation FQD12N20L Rev. C2
FQD12N20L — N-Channel QFET ® MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V,
ID = 4.5 A
• Low Gate Charge (Typ. 16 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
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FQD12N20LTM MOSFET Power Electronics N-Channel enhancement mode 200V 9.0A Images |