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Brand Name : onsemi
Model Number : FDMC86116LZ
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 3.3A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 103mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Vgs (Max) : ±20V
N-Channel PowerTrench
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 103mOhm @ 3.3A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 19W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Package / Case |
General Description
This N−Channel logic Level MOSFETs are produced using
onsemi‘s advanced POWERTRENCH process that incorporates
Shielded Gate technology. This process has been optimized for the
on−state resistance and yet maintain superior switching performance.
G−S zener has been added to enhance ESD voltage level.
Features
• Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A
• Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A
• HBM ESD Protection Level > 3 kV Typical (Note 1)
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Conversion
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FDMC86116LZ MOSFET Power Electronics N-Channel Shielded Gate 100 V 7.5 A 103 m Images |