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Brand Name : onsemi
Model Number : NDS7002A
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 60 V
Current - Continuous Drain (Id) @ 25°C : 280mA (Ta)
Rds On (Max) @ Id, Vgs : 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds : 50 pF @ 25 V
Vgs (Max) : ±20V
NDS7002A MOSFET Power Electronics – Advanced High-Performance Solution for Demanding Power Applications
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 300mW (Ta) | |
Operating Temperature | -65°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-23-3 | |
Package / Case |
NDS7002A MOSFET Power Electronics
Manufacturer: ON Semiconductor
Product Features:
• Enhanced RDS(on) with Very Low Qg, Qgd and Qgs
• Low Gate Charge for Reduced Switching Losses
• Low Output Capacitance for Improved Transient Response
• Low Threshold Voltage for Improved Efficiency
• Low Gate-Source Leakage
• Enhanced Avalanche and dV/dt Ruggedness
• Compliant to RoHS Directive 2011/65/EU
Absolute Maximum Ratings:
• Drain-Source Voltage: 600V
• Gate-Source Voltage: ±20V
• Drain Current (continuous): 5A
• Drain Current (pulsed): 10A
• Channel Temperature: -55°C to +175°C
• Storage Temperature: -55°C to +175°C
• Power Dissipation: 12W
Electrical Characteristics:
• RDS(on): 0.5Ω
• Qg: 7.3nC
• Qgd: 0.9nC
• Qgs: 2.0nC
• Threshold Voltage: 2.7V
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NDS7002A MOSFET Power Electronics – Advanced High-Performance Solution for Demanding Power Applications Images |