Sign In | Join Free | My polstate.com |
|
Brand Name : onsemi
Model Number : FDC86244
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 150 V
Current - Continuous Drain (Id) @ 25°C : 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 144mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Vgs (Max) : ±20V
N-Channel PowerTrench
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 144mOhm @ 2.3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 345 pF @ 75 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.6W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SuperSOT™-6 | |
Package / Case |
General Description
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for rDS(on), switching
performance and ruggedness.
Features
• Shielded Gate MOSFET Technology
• Max rDS(on) = 144 m at VGS = 10 V, ID = 2.3 A
• Max rDS(on) = 188 m at VGS = 6 V, ID = 1.9 A
• High Performance Trench Technology for Extremely Low rDS(on)
• High Power and Current Handling Capability in a Widely Used
Surface Mount Package
• Fast Switching Speed
• 100% UIL Tested
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Applications
• Load Switch
• Synchronous Rectifier
• Primary Switch
![]() |
FDC86244 MOSFET Power Electronics N-Channel Shielded Gate 150 V 2.3 A 144 m Images |