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Brand Name : onsemi
Model Number : FDS8896
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Vgs (Max) : ±20V
N-Channel PowerTrench
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2525 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SOIC | |
Package / Case |
Features
rDS(on) = 6.0mΩ, VGS = 10V, ID = 15A
rDS(on) = 7.3mΩ, VGS = 4.5V, ID = 14A
High performance trench technology for extremely low rDS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Applications
DC/DC converters
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FDS8896 MOSFET Power Electronics N-Channel PowerTrench 30V 15A 6.0mΩ Images |