BSC057N08NS3GATMA1 MOSFET Power Electronics High Performance Automotive Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
Description:
The BSC057N08NS3GATMA1 is a N-Channel MOSFET with an efficient and fast switching performance. This device features low on-state resistance, low gate charge and good avalanche characteristics. This MOSFET is suitable for applications such as DC/DC converters, synchronous rectifiers and high voltage switching.
Features:
• N-channel
• Low on-state resistance
• Low gate charge
• Good avalanche characteristics
• Fast switching performance
• Maximum drain source voltage: 800V
• Maximum drain current: 57A
• Maximum junction temperature: 175°C
• Package type: TO-220AB
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BSC057N08NS3GATMA1 MOSFET Power Electronics High Performance Automotive Applications Images
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