IRFBE30PBF MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material
Product Description:
The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It features a low on-state resistance, low gate charge, and a fast switching capability. With a maximum drain current of 30A, this device is ideal for use in power management and high-current switching applications.
Features/Specifications:
• RoHS Compliant
• N-Channel MOSFET
• Maximum Drain Current: 30A
• Maximum Drain-Source Voltage: 100V
• On-State Resistance: 0.0025 ohm
• Maximum Gate-Source Voltage: 20V
• Maximum Gate-Source Leakage Current: 10nA
• Maximum Operating Temperature: 175°C
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IRFBE30PBF MOSFET Power Electronics 30V N-channel MOSFET Silicon Material Images
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