NTMFS5C646NLT1G MOSFET Power
Electronics High Performance Optimum Reliability Single N−Channel
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS5C646NLT1G is a high-performance, low-voltage, low-threshold, low-capacitance, low-gate charge, small-footprint, P-channel MOSFET power electronics solution. It features a wide gate-source breakdown voltage range of -2.5V to -8V and a low on-state resistance of 4.6Ω. The package size is a small and low profile 0.9mm x 1.3mm, ideal for space-constrained applications.
This MOSFET is designed for power management applications, DC-DC converters, and other power management systems. It also has superior output characteristics, including a high current rating of 6A and a low input capacitance of 2.5pF. The NTMFS5C646NLT1G is RoHS compliant and halogen free making it an ideal choice for high-performance, low-power, and environmentally friendly applications.
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NTMFS5C646NLT1G MOSFET Power Electronics High Performance Optimum Reliability Single N−Channel Images
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