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Brand Name : Infineon
Model Number : IRF8304MTRPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 28A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.2mOhm @ 28A, 10V
IRF8304MTRPBF MOSFET Power Electronics N-Channel 30V Package F DirectFET Ultra Low Package Inductance
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 28A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | DirectFET™ Isometric MX | |
Package / Case |
RoHS Compliant and Halogen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
Description:
The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
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IRF8304MTRPBF MOSFET Power Electronics N-Channel 30V Package F DirectFET Ultra Low Package Inductance Images |