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Brand Name : Infineon
Model Number : IRF1404ZPBF
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40 V
Current - Continuous Drain (Id) @ 25°C : 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.7mOhm @ 75A, 10V
IRF1404ZPBF MOSFET Power Electronics N-Channel 40V variety of applications Package TO-220
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 200W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | | |
Supplier Device Package | TO-220AB | |
Package / Case |
Features:
Advanced Process Technology
UltraLow On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Description:
This HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremelylowon-resistance per silicon area. Additional features ofthis design area175°Cjunctionoperatingtemperature.fast switching speed and improved repetitiveavalanche rating . These features combine to makethis design an extremely efficient and reliable devicefor use in a wide variety of applications.
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IRF1404ZPBF MOSFET Power Electronics N-Channel 40V variety of applications Package TO-220 Images |