Sign In | Join Free | My polstate.com
China Shenzhen Sai Collie Technology Co., Ltd. logo
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
Active Member

3 Years

Home > MOSFET Power Electronics >

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

Shenzhen Sai Collie Technology Co., Ltd.
Contact Now

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

Brand Name : Infineon

Model Number : IRFSL5615PBF

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 150 V

Current - Continuous Drain (Id) @ 25°C : 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 42mOhm @ 21A, 10V

Contact Now

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
42mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1750 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
144W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
TO-262
Package / Case

Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved


Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for


Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier

Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

Battery protectionWhy buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262


Wholesale IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262 from china suppliers

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262 Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shenzhen Sai Collie Technology Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)