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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

Brand Name : Infineon

Model Number : IRFSL5615PBF

Place of Origin : original

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-3 days

Packaging Details : standard

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 150 V

Current - Continuous Drain (Id) @ 25°C : 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 42mOhm @ 21A, 10V

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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
42mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1750 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
144W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA

Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved


Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for


Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier

Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

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How to buy >>>
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Service >>>
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• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262


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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262 Images

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