AON7410 MOSFET Power Electronics
Transistors N-Channel 30V 9.5A For Use In DC DC Converters Package 8-DFN-EP
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
General Description
The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. RoHS and Halogen-Free Compliant
Features
VDS (V) = 30V
ID = 24A (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 10V)
RDS(ON) < 26mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
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