FDMC86139P, N-Channel Power MOSFET
The FDMC86139P is an N-Channel Power MOSFET designed for high frequency switching applications. It is designed to provide excellent switching performance and high current handling capability.
Features:
- Low on-resistance
- Low gate charge
- Avalanche rated
- Fast switching
- Low capacitance
- RoHS compliant
Specifications:
- Drain-Source Voltage (Vdss): 100V
- Gate-Source Voltage (Vgs): ±20V
- Current - Continuous Drain (Id): 12.5A
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 10V, 10A
- Power - Max: 17.5W
- Operating Temperature: -55°C to 150°C
- Packaging: Tape & Reel
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet Transistor FDMC86139P High Speed Low Voltage High Efficiency Switch Images
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