NVMFS5C646NLWFAFT1G MOSFET Power Electronics
Product Description:
The NVMFS5C646NLWFAFT1G is a high-performance MOSFET power electronics device designed to deliver superior power efficiency and reliability. This N-channel MOSFET is suitable for use in a variety of applications, including power conversion, motor control, and signal conditioning. It is constructed with an integrated high-voltage gate and an integrated body diode, enabling its use in high-power applications. With an excellent on-resistance and low gate charge, this device provides superior power efficiency and reliability in a wide variety of systems.
Features:
-High-performance MOSFET power electronics
-Integrated high-voltage gate
-Integrated body diode
-Excellent on-resistance
-Low gate charge
-Wide variety of systems
Applications:
-Power conversion
-Motor control
-Signal conditioning
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Mosfet Transistor NVMFS5C646NLWFAFT1G High Performance Ultra Low Voltage FETs Images
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