Product Listing:
IPC 100N04S5L1R9ATMA1 - N-Channel Power MOSFET
The IPC 100N04S5L1R9ATMA1 is an N-channel power MOSFET designed to provide high current, low on-state resistance, and low gate charge. This device is optimized for use in automotive power management applications.
Product Features:
• N-Channel MOSFET
• Enhancement mode
• Drain-source voltage: 100V
• Continuous drain current: 40A
• RDS(on): 0.5ohm
• Fast switching time
• Low gate charge
• Automotive grade AEC-Q101 qualified
• RoHS compliant
• MSL 1 rated
• Halogen-free
• ESD protection
• Operating temperature range: -55°C to +150°C
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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Common Power Mosfet IPC100N04S5L1R9ATMA1 High Performance And Reliability Images
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