Infineon IPD530N15N3GATMA1 MOSFET Power Electronics
Product Description:
The Infineon IPD530N15N3GATMA1 is a high-performance power MOSFET, designed to provide superior performance in power electronics applications. This power MOSFET incorporates the latest advanced process technology to provide improved efficiency, low gate charge, fast switching, and improved avalanche performance. This device offers high peak current capability and high temperature operation, making it ideal for use in automotive, industrial, and consumer applications.
Features:
• High peak current capability
• Low gate charge for improved efficiency
• High temperature operation
• Fast switching
• Improved avalanche performance
• High voltage rating
• Low on-resistance
Package Type: TO-247
V(BR)DSS: 530V
RDS(on): 15mOhm
I(D): 30A
Qg: 12nC
Ciss: 1,800pF
Package: TO-247
| Product Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
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IPD530N15N3GATMA1 Common Power Mosfet 15A 530V N-Channel RoHS Compliant Images
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