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IRFR120NTRLPBF Common Power Mosfet High Performance And Low RDS(On)

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IRFR120NTRLPBF Common Power Mosfet High Performance And Low RDS(On)

Brand Name : Infineon Technologies

Model Number : IRFR120NTRLPBF

Place of Origin : Multi-origin

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-7days

Packaging Details : Standard

Product Type : MOSFET Power Electronics

Manufacturer : Infineon Technologies

Manufacturer Product Number : IRFR120NTRLPBF

Description : MOSFET N-CH 100V 9.4A DPAK

Manufacturer Standard Lead Time : 1-7days

Detailed Description : N-Channel 100 V 9.4A (Tc) 48W (Tc) Surface Mount PG-TO252-3

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This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include:

• Drain-Source Voltage: 60V
• Continuous Drain Current: -11A
• Power Dissipation: 4.5W
• Operating Junction Temperature: -55°C to 175°C
• On Resistance RDS(ON): 0.042Ω
• Transistor Polarity: N-Channel
• Mounting Style: Surface Mount
• Package/Case: SOT-223
• Maximum Gate Threshold Voltage: 3.8V
• Maximum Drain-Source On-State Resistance: 0.042 Ohms
• Maximum Gate-Source Voltage: +/-20V
• Maximum Drain Current: -11A
• Minimum Single Pulse On-Time: 140ns
• Maximum Single Pulse On-Time: 5.5µs
• Operating Temperature Range: -55°C to 175°C

Product Status
Not For New Designs
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
PG-TO252-3
Package / Case
Base Product Number

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IRFR120NTRLPBF Common Power Mosfet High Performance And Low RDS(On)


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