IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications

IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications

Parameters:
- Drain-Source Voltage (VDS): 100V
- Drain Current (ID): 10A
- RDS(on): 0.0055Ω
- Gate-Source Voltage (VGS): ±20V
- Power Dissipation (PD): 1W
- Maximum Junction Temperature (Tj): 150°C
- Operating Temperature Range (TOPR): -55°C to +150°C
- Mounting Type: Through Hole

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