BSC028N06NS MOSFET Power Electronics: High Performance Low On-Resistance Robust Design

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BSC028N06NS MOSFET Power Electronics: High Performance Low On-Resistance Robust Design

Name: BSC028N06NS MOSFET Power Electronics High Performance Low OnResistance Robust Design
Brand: Infineon Technologies
Price: 1 USD

Wholesale BSC028N06NS MOSFET Power Electronics: High Performance Low On-Resistance Robust Design from china suppliers

Brand Name : Infineon Technologies

Model Number : BSC028N06NS

Place of Origin : Mulit-origin

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-7days

Packaging Details : Standard

Product Status : Active

Technology : MOSFET (Metal Oxide)

Base Product Number : BSC028N06NS

Type : N-Channel

Drain source voltage (Vdss) : 60V

Continuous drain current (Id) : 23A

Power (Pd) : 2.5W

On-resistance (RDS (on) @ Vgs, Id) : 2.8m Ω @ 10V, 50A

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Product Name: BSC028N06NS N-Channel MOSFET

Parameters:

Drain-Source Voltage: 60V

Continuous Drain Current: 28A

Gate-Source Voltage: ±20V

Power Dissipation: 210W

RDS(on): <50mΩ

Pulsed Drain Current: 56A

Mounting Type: Through Hole

Package/Case: TO-220F-3

Operating Temperature: -55°C to 175°C

BSC028N06NS MOSFET Power Electronics: High Performance Low On-Resistance Robust Design

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BSC028N06NS MOSFET Power Electronics: High Performance Low On-Resistance Robust Design

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