IRFH5302TRPBF MOSFET Power Electronics High Performance, Low On-Resistance, Low Gate Charge

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IRFH5302TRPBF MOSFET Power Electronics High Performance, Low On-Resistance, Low Gate Charge

Name: IRFH5302TRPBF MOSFET Power Electronics High Performance Low OnResistance Low Gate Charge
Brand: Infineon Technologies
Price: 1 USD

Wholesale IRFH5302TRPBF MOSFET Power Electronics High Performance, Low On-Resistance, Low Gate Charge from china suppliers

Brand Name : Infineon Technologies

Model Number : IRFH5302TRPBF

Place of Origin : Mulit-origin

MOQ : 1

Price : Negotiable

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 999999

Delivery Time : 1-7days

Packaging Details : Standard

Product Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 32A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id : 2.35V @ 100µA

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Product Listing:

IRFH5302TRPBF N-Channel Power MOSFET

Parameters:

•Voltage: 55V
•RDS(on): 0.13 Ohm
•ID: 17A
•Package: TO-252
•Configuration: Single
•Mounting Type: Through Hole
•Drain to Source Voltage (Vdss): 55V
•Gate to Source Voltage (Vgs): 20V
•Current - Continuous Drain (Id) @ 25°C: 17A
•Power - Max: 1.2W
•Operating Temperature: -55°C ~ 150°C
•Rise Time: 12nS
•Fall Time: 10nS
•Toggle Frequency: 100kHz
•Input Capacitance (Ciss) @ Vds: 570pF
•Output Capacitance (Coss) @ Vgs: 57pF

IRFH5302TRPBF MOSFET Power Electronics High Performance, Low On-Resistance, Low Gate Charge

Why buy from us >>> Fast / Safely / Conveniently

• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

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IRFH5302TRPBF MOSFET Power Electronics High Performance, Low On-Resistance, Low Gate Charge

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