Infineon BSC052N08NS5ATMA1 N-Channel MOSFET Features:
• Low On-Resistance RDS(on)
• Low Gate Charge Qg
• Low Forward Voltage VF
• Ease of Paralleling
• Low Threshold Voltage VGS(th)
• Enhanced dv/dt Capability
• Avalanche Rated
• Halogen-Free According to IEC 61249-2-21
• RoHS Compliant Specifications
• Drain to Source Voltage: 800 V
• Continuous Drain Current Id: 52 A
• Gate Threshold Voltage VGS(th): 4 V
• On-Resistance RDS(on): 0.0055 Ω
• Gate Charge Qg: 25 nC
• Forward Transconductance gfs: 24.7 S
• Power Dissipation Pd: 280 W
• Operating Temperature: -55°C to 175°C
• Package: TO-252-3 (DPAK)
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BSC052N08NS5ATMA1 MOSFET Power Electronics High-Performance Low Voltage High Efficiency Switching Solution Images
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