SI9407BDY-T1-GE3 MOSFET Power
Electronics High Performance High Reliability Solution for Your Needs
The SI9407BDY-T1-GE3 is a N-Channel MOSFET designed to provide low on-resistance and wide voltage range performance. This device is suitable for use in low voltage, low frequency switching applications, as well as for high frequency and DC/DC applications. This device also features low gate charge, low drain-source on-resistance, and low output capacitance.
Features: • Low On-Resistance • Low Gate Charge • Low Output Capacitance • Low Drain-Source On-Resistance • High Voltage Range • Low Frequency Switching • High Frequency and DC/DC Applications Package: TO-252 Absolute Maximum Ratings: • Drain Source Voltage: -60V • Gate Source Voltage: -20V • Drain Current: -8A • Maximum Power Dissipation: 2.25W • Operating Temperature: -55°C to 175°C • Storage Temperature: -55°C to 175°C
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