IPD60R1K4C6 MOSFET Power Electronics - High Current Low On-Resistance Low Gate Charge

Product Listing:

IPD60R1K4C6 N-Channel Enhanced MOSFET Specifications:

•Voltage: 60V

•Resistance: 1KΩ

•Capacitance: 4C6

•Current: 5A

•Package: TO-252

•Features: Low on-resistance, low input capacitance, and fast switching speed.

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IPD60R1K4C6 MOSFET Power Electronics - High Current Low On-Resistance Low Gate Charge Images