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Brand Name : onsemi
Model Number : FDMS86300
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 30 V
Current - Continuous Drain (Id) @ 25°C : 11.9A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30 nC @ 10 V
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | |
Rds On (Max) @ Id, Vgs | 3.9mOhm @ 19A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 7082 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Product Listing:
ON Semiconductor FDMS86300 N-Channel MOSFET Power Electronics
Features:
• N-Channel MOSFET
• Logic Level Gate Drive
• High-Speed Switching
• Low On-Resistance
• Low Total Gate Charge
• Low Input Capacitance
• Low Leakage Current
• Improved Gate, Avalanche and Dynamic dV/dt Robustness
• High-Temperature Operation
• AEC-Q101 qualified
Specifications:
• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 80A
• Maximum Pulsed Drain Current (IDM): 160A
• Gate-Source Voltage (VGS): -8V to +20V
• On-Resistance (RDS(on)): 0.0035Ω
• Total Gate Charge (Qg): 21.4nC
• Input Capacitance (Ciss): 1480pF
• Operating Temperature: -55°C to +150°C
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FREESCALE FDMS86300 N-Channel MOSFET Transistor for High Power Reliable and Efficient Power Electronics Applications Images |