BSS138 MOSFET Power Electronics
N-Channel Enhancement Mode Transistor TO-236-3 Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | |
The BSS138 is a N-channel enhancement mode Field Effect Transistor (FET) housed in a TO-236-3 package. It is specifically designed for low voltage, low current switching applications. The device features an ultra-low on-resistance, fast switching times and a simple drive requirement. It is ideal for applications such as switching and level shifting in consumer, industrial, communication and automotive markets.
This FET offers excellent thermal and electrical characteristics, with a maximum drain-source breakdown voltage of 40V and a maximum continuous drain current of 200mA. This device also features a low gate threshold voltage of 1.8V and a maximum junction temperature of 150°C. The BSS138 is RoHS compliant, making it suitable for lead-free applications.
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BSS138 MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications Images
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